IndiumV3, Chine, Analysis, bibRecord, 000C66

Ultraviolet-illuminated fluoropolymer indium-tin-oxide buffer layers for improved power conversion in organic photovoltaics

Identifieur interne : 000C66 ( Chine/Analysis ); précédent : 000C65; suivant : 000C67

Ultraviolet-illuminated fluoropolymer indium-tin-oxide buffer layers for improved power conversion in organic photovoltaics

Auteurs : RBID : Pascal:09-0368058

Descripteurs français

Pascal (Inist)
- Electronique organique, Optoélectronique, Porteur charge, Hétérojonction double, Dispositif photovoltaïque, Couche active, Anode, Travail sortie, Courant court circuit, Tension circuit ouvert, Diminution coût, Polymère fluor, Oxyde d'indium, Oxyde d'étain, Couche oxyde, Couche tampon, Phtalocyanine métallique, Complexe de cuivre, Dispositif optoélectronique, ITO.

English descriptors

KwdEn :
- Active layer, Anode, Buffer layer, Charge carrier, Copper complex, Cost lowering, Double heterojunction, Fluorine containing polymer, Indium oxide, Metallophthalocyanine, Open circuit voltage, Optoelectronic device, Optoelectronics, Organic electronics, Oxide layer, Photovoltaic cell, Short circuit currents, Tin oxide, Work function.

Abstract

We demonstrate that the charge carrier extraction in double heterojunction organic photovoltaic(OPV) devices can be enhanced by inserting an UV-illuminated fluoropolymer polytetrafluoroethylene(PTFE) layer between indium-tin-oxide and the thermal evaporated copper-phthalocyanine(CuPc)/buckyball(C_6o) organic active layers. In this work, we show that the anode work function influences the photocarrier collection characteristics, where the short-circuit current and open-circuit voltage increase from 1.6 to 4.8 mA/cm² and 0.41 to 0.48 V, respectively after the buffer layer insertion associated primary with the barrier decrease in the ITO/CuPc interface. This result shows the potential of UV-illuminated PTFE as a low-cost stable buffer layer for OPV devices.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 005110
to stream Main, to step Repository: 004867
to stream Chine, to step Extraction: 000C66

Links to Exploration step

Pascal:09-0368058

Le document en format XML

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<author><name>BONAN KANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Nanoelectronics Centre, Advanced Technology Institute, University of Surrey</s1>
<s2>Guildford, Surrey GU2 7XH</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
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<country>Royaume-Uni</country>
<wicri:noRegion>Guildford, Surrey GU2 7XH</wicri:noRegion>
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<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>State Key Laboratory on Integrated Optoelectronics, Jilin University Region</s1>
<s2>Changchun 130012</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Changchun</settlement>
<region type="province">Jilin</region>
<region type="groupement">Dongbei</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Tan, L W" uniqKey="Tan L">L. W. Tan</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Nanoelectronics Centre, Advanced Technology Institute, University of Surrey</s1>
<s2>Guildford, Surrey GU2 7XH</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>Guildford, Surrey GU2 7XH</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Silva, S R P" uniqKey="Silva S">S. R. P. Silva</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Nanoelectronics Centre, Advanced Technology Institute, University of Surrey</s1>
<s2>Guildford, Surrey GU2 7XH</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
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<country>Royaume-Uni</country>
<wicri:noRegion>Guildford, Surrey GU2 7XH</wicri:noRegion>
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<seriesStmt><idno type="ISSN">1566-1199</idno>
<title level="j" type="abbreviated">Org. electron.</title>
<title level="j" type="main">Organic electronics </title>
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<term>Anode</term>
<term>Buffer layer</term>
<term>Charge carrier</term>
<term>Copper complex</term>
<term>Cost lowering</term>
<term>Double heterojunction</term>
<term>Fluorine containing polymer</term>
<term>Indium oxide</term>
<term>Metallophthalocyanine</term>
<term>Open circuit voltage</term>
<term>Optoelectronic device</term>
<term>Optoelectronics</term>
<term>Organic electronics</term>
<term>Oxide layer</term>
<term>Photovoltaic cell</term>
<term>Short circuit currents</term>
<term>Tin oxide</term>
<term>Work function</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Electronique organique</term>
<term>Optoélectronique</term>
<term>Porteur charge</term>
<term>Hétérojonction double</term>
<term>Dispositif photovoltaïque</term>
<term>Couche active</term>
<term>Anode</term>
<term>Travail sortie</term>
<term>Courant court circuit</term>
<term>Tension circuit ouvert</term>
<term>Diminution coût</term>
<term>Polymère fluor</term>
<term>Oxyde d'indium</term>
<term>Oxyde d'étain</term>
<term>Couche oxyde</term>
<term>Couche tampon</term>
<term>Phtalocyanine métallique</term>
<term>Complexe de cuivre</term>
<term>Dispositif optoélectronique</term>
<term>ITO</term>
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<front><div type="abstract" xml:lang="en">We demonstrate that the charge carrier extraction in double heterojunction organic photovoltaic(OPV) devices can be enhanced by inserting an UV-illuminated fluoropolymer polytetrafluoroethylene(PTFE) layer between indium-tin-oxide and the thermal evaporated copper-phthalocyanine(CuPc)/buckyball(C<sub>6o</sub>
) organic active layers. In this work, we show that the anode work function influences the photocarrier collection characteristics, where the short-circuit current and open-circuit voltage increase from 1.6 to 4.8 mA/cm<sup>2</sup>
 and 0.41 to 0.48 V, respectively after the buffer layer insertion associated primary with the barrier decrease in the ITO/CuPc interface. This result shows the potential of UV-illuminated PTFE as a low-cost stable buffer layer for OPV devices.</div>
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<fA11 i1="01" i2="1"><s1>BONAN KANG</s1>
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<fA14 i1="01"><s1>Nanoelectronics Centre, Advanced Technology Institute, University of Surrey</s1>
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<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<fA14 i1="02"><s1>State Key Laboratory on Integrated Optoelectronics, Jilin University Region</s1>
<s2>Changchun 130012</s2>
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<fC01 i1="01" l="ENG"><s0>We demonstrate that the charge carrier extraction in double heterojunction organic photovoltaic(OPV) devices can be enhanced by inserting an UV-illuminated fluoropolymer polytetrafluoroethylene(PTFE) layer between indium-tin-oxide and the thermal evaporated copper-phthalocyanine(CuPc)/buckyball(C<sub>6o</sub>
) organic active layers. In this work, we show that the anode work function influences the photocarrier collection characteristics, where the short-circuit current and open-circuit voltage increase from 1.6 to 4.8 mA/cm<sup>2</sup>
 and 0.41 to 0.48 V, respectively after the buffer layer insertion associated primary with the barrier decrease in the ITO/CuPc interface. This result shows the potential of UV-illuminated PTFE as a low-cost stable buffer layer for OPV devices.</s0>
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<s5>04</s5>
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<fC03 i1="04" i2="X" l="ENG"><s0>Double heterojunction</s0>
<s5>04</s5>
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<fC03 i1="04" i2="X" l="SPA"><s0>Heterounión doble</s0>
<s5>04</s5>
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<fC03 i1="05" i2="X" l="FRE"><s0>Dispositif photovoltaïque</s0>
<s5>05</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>10</s5>
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<s5>11</s5>
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<s2>NK</s2>
<s5>22</s5>
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<s2>NK</s2>
<s5>22</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Polímero flúor</s0>
<s2>NK</s2>
<s5>22</s5>
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<fC03 i1="13" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>23</s5>
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<s5>23</s5>
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<s5>23</s5>
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<s5>24</s5>
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<s5>24</s5>
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<s5>24</s5>
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<fC03 i1="15" i2="X" l="FRE"><s0>Couche oxyde</s0>
<s5>25</s5>
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<fC03 i1="15" i2="X" l="ENG"><s0>Oxide layer</s0>
<s5>25</s5>
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<fC03 i1="15" i2="X" l="SPA"><s0>Capa óxido</s0>
<s5>25</s5>
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<fC03 i1="16" i2="X" l="FRE"><s0>Couche tampon</s0>
<s5>26</s5>
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<s5>26</s5>
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<s5>26</s5>
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<s5>28</s5>
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<s5>31</s5>
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<s5>31</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>ITO</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fN21><s1>264</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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   |texte=   Ultraviolet-illuminated fluoropolymer indium-tin-oxide buffer layers for improved power conversion in organic photovoltaics
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Ultraviolet-illuminated fluoropolymer indium-tin-oxide buffer layers for improved power conversion in organic photovoltaics

Ultraviolet-illuminated fluoropolymer indium-tin-oxide buffer layers for improved power conversion in organic photovoltaics

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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